Aluminum nitride ceramics, have the advantages of high thermal conductivity, good electrical resistance and low density, the coefficient of aluminum nitride ceramics is similar to that of silicon.
Product Details:
Polishing Aluminum Nitride AlN Ceramic Substrate for HBLED
Product Description:
The excellent properties make aluminum nitride ceramics become an ideal material for applications where good heat spreading capability and good electrical insulation are required. Active solders can wet and adhere to many of the thermally conductive ceramics AlN that are being used in HBLED's and enable effective and thermally stable and conductive joints.
Specification:
Dimension(LxW) | 50.8*50.8mm,114.3*114.3mm etc. |
Thickness | 0.1-1.5mm |
Thermal Conductivity | 170-230 W/m.k |
Dielectric Constant | 8-9(MHz) |
Bulk Density | 3.3 g/m³ |
Surface Roughness | Ra ≤0.03 μm on both sides |
Company Advantage:
Huaqing founded in 2004 with sum investment 80 million RMB, registered capital 40 million RMB. Huaqing's AlN&Al2O3 ceramic products have high thermal-conductivity, low dielectric constant, good dissipation factor and excellent mechanical property compared with the other factories in the industry. AlN&Al2O3 ceramic are widely used in HBLED, opto-communication, IGBT, power devices, TEC and the other high-end applications.
Workshop&Equipment:
Packaging & Delivery:
Deliver by UPS,DHL,Fedex etc.
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