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Aluminum Nitride Ceramic Substrate
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12inch aluminum nitride ceramic substrate GaN-on-QST

Aluminum nitride ceramic GaN-on-QST
AlN ceramic on GaN-on-QST

12inch aluminum nitride ceramic substrate GaN-on-QST

1.Material:Aluminum Nitride.

2.Function:Insulation and heat dissipation ceramic.

3.Type:Ceramic.

4.Color:Gray.

5.Can be customed:yes,please provide drawings for specific products.

12inch aluminum nitride ceramic substrate GaN-on-QST

Product Description:

GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed crystal. In 2017, they collaborated with Kyma Technologies to produce the first free-standing GaN substrate (4 inches) based on QST substrate technology. In January 2020, Qromis received investment from Toyota Motor Corporation. Qromis has licensed this technology to two companies, including World Advanced and Shin-Etsu Chemical, both of which are accelerating the pace of epitaxy and device foundry production this year.

Qromis' self-supporting GaN substrate has three major advantages, so it is highly optimistic: ● The yield rate of GaN devices can reach 90%. ● 6-inch and 8-inch substrates have been released, and 12-inch GaN substrates are planned to be produced in 2025.

6-inch and 8-inch Aluminum nitride(AlN) substrates are Fujian Huaqing's regular product,and now we can supply 12-inch Aluminum nitride(AlN) ceramic substrate which can be used as the underlying substrate for GaN-on-QST product.

 

Our Aluminum Nitride substrates (AlN) are available in various sizes and thicknesses. Thanks to a large and live inventory, we can ship your part fast for you to start your project.

Our Service:
Please contact us for customization. We can also supply Aluminum Nitride (AlN) Ceramic with thermal conductivity up to 230W/mK

Specification:

Dimension (LxW) φ12inch
Thickness  1.0mm
Thermal Conductivity 170W/m.K
Dielectric Constant 8-9 (MHz)
Bulk Density 3.3 g/cm³
Surface Roughness Ra :0.03-0.6 μm on both sides

Company Advantage:

Huaqing Founded in 2004, with sum investment of 80Million RMB, registered capital 40Million RMB. Huaqing's AlN & Al2O3 ceramic products have high thermal-conductivity, low dielectric constant, good dissipation factor and excellent mechanical property compared with the other factories in the industry. AlN & Al2O3 ceramic are widely used in HBLED, opto-communication, IGBT, power devices, TEC and the other high-end applications.

Workshop & Equipment:

 

 

 

 

Packaging & Delivery:
Deliver by UPS,DHL,Fedex etc

 

 

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    • Have a Questions? Call Us +86 -15960789288
    • Contact with Us kevinsze@aln.net.cn
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